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Electrically Erasable Programmable Read-Only Memory (EEPROM)
»óǰÄÚµå : 1753079
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¹ßÇàÀÏ : 2025³â 06¿ù
ÆäÀÌÁö Á¤º¸ : ¿µ¹® 304 Pages
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US $ 5,850 £Ü 8,496,000
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EEPROM(Electrically Erasable Programmable Read-Only Memory) ¼¼°è ½ÃÀåÀº 2030³â±îÁö 9¾ï 930¸¸ ´Þ·¯¿¡ À̸¦ Àü¸Á

2024³â¿¡ 7¾ï 2,390¸¸ ´Þ·¯·Î ÃßÁ¤µÇ´Â EEPROM ¼¼°è ½ÃÀåÀº 2024-2030³â CAGR 3.9%·Î ¼ºÀåÇÏ¿© 2030³â¿¡´Â 9¾ï 930¸¸ ´Þ·¯¿¡ À̸¦ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù. º» º¸°í¼­¿¡¼­ ºÐ¼®ÇÑ ºÎ¹® Áß ÇϳªÀÎ 16Kbit´Â CAGR 4.8%¸¦ ³ªÅ¸³»°í, ºÐ¼® ±â°£ Á¾·á½Ã¿¡´Â 2¾ï 6,270¸¸ ´Þ·¯¿¡ À̸¦ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù. 32Kbit ºÎ¹®ÀÇ ¼ºÀå·üÀº ºÐ¼® ±â°£¿¡ CAGR 4.6%·Î ÃßÁ¤µË´Ï´Ù.

¹Ì±¹ ½ÃÀåÀº 1¾ï 9,720¸¸ ´Þ·¯·Î ÃßÁ¤, Áß±¹Àº CAGR 7.3%·Î ¼ºÀå ¿¹Ãø

¹Ì±¹ÀÇ EEPROM ½ÃÀåÀº 2024³â¿¡ 1¾ï 9,720¸¸ ´Þ·¯·Î ÃßÁ¤µË´Ï´Ù. ¼¼°è 2À§ °æÁ¦´ë±¹ÀÎ Áß±¹Àº ºÐ¼® ±â°£ÀÎ 2024-2030³â CAGR 7.3%·Î 2030³â±îÁö 1¾ï 8,520¸¸ ´Þ·¯ ±Ô¸ð¿¡ À̸¦ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù. ±âŸ ÁÖ¸ñÇØ¾ß ÇÒ Áö¿ªº° ½ÃÀåÀ¸·Î¼­´Â ÀϺ»°ú ij³ª´Ù°¡ ÀÖÀ¸¸ç, ºÐ¼® ±â°£Áß CAGRÀº °¢°¢ 1.5%¿Í 3.0%¸¦ º¸ÀÏ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù. À¯·´¿¡¼­´Â µ¶ÀÏÀÌ CAGR 2.2%·Î ÃßÁ¤µË´Ï´Ù.

¼¼°èÀÇ EEPROM ½ÃÀå - ÁÖ¿ä µ¿Çâ°ú ÃËÁø¿äÀÎ Á¤¸®

ÀÓº£µðµå ÀüÀÚ ½Ã½ºÅÛÀÇ ½Å·Ú¼º°ú À¯¿¬¼ºÀ» À§ÇØ EEPROMÀÌ ÇʼöÀûÀÎ ÀÌÀ¯´Â ¹«¾ùÀΰ¡?

EEPROM´Â ÀÓº£µðµå ÀüÀÚÁ¦Ç°¿¡ ÇʼöÀûÀÎ ±¸¼º ¿ä¼Ò·Î, ĨÀ» Á¦°ÅÇϰųª ÀçÇÁ·Î±×·¡¹ÖÇÒ ÇÊ¿ä ¾øÀÌ ¹ÙÀÌÆ® ´ÜÀ§·Î Àü±âÀûÀ¸·Î Àç±â·ÏÇÒ ¼ö ÀÖ´Â ºñÈֹ߼º µ¥ÀÌÅÍ ½ºÅ丮Áö¸¦ Á¦°øÇÕ´Ï´Ù. EEPROMÀº Á¦Á¶ ½Ã ¿µ±¸ÀûÀ¸·Î ÇÁ·Î±×·¡¹ÖµÇ´Â ±âÁ¸ ROMÀ̳ª Àڿܼ±À¸·Î Áö¿ö¾ß ÇÏ´Â EPROM°ú ´Þ¸® ½Ã½ºÅÛ ³»¿¡¼­ º¯°æÀÌ °¡´ÉÇϱ⠶§¹®¿¡ Æß¿þ¾î, ±¸¼º ¼³Á¤, ±³Á¤ µ¥ÀÌÅÍ, ¿À·ù ·Î±×¸¦ µ¿ÀûÀ¸·Î ¾÷µ¥ÀÌÆ®ÇÒ ¼ö ÀÖ½À´Ï´Ù. µû¶ó¼­ Àü¿ø °ø±Þ Áֱ⠵¿¾È Áß¿äÇÑ µ¥ÀÌÅ͸¦ À¯ÁöÇØ¾ß ÇÏ´Â Àåºñ³ª ÁÖ±âÀûÀÎ ÇöÀå ¾÷µ¥ÀÌÆ®°¡ ÇÊ¿äÇÑ Àåºñ¿¡ ÇʼöÀûÀÔ´Ï´Ù. ÀÀ¿ë ºÐ¾ß´Â ÀÚµ¿Â÷ ECU(¿£Áø Á¦¾î ÀåÄ¡), ÀÇ·á±â±â, »ê¾÷ ÀÚµ¿È­ ½Ã½ºÅÛ, °¡ÀüÁ¦Ç°, ½º¸¶Æ® ¹ÌÅÍ, Åë½Å Àåºñ µî ´Ù¾çÇÕ´Ï´Ù. ¿¹¸¦ µé¾î, Â÷·® žÀç ½Ã½ºÅÛ¿¡¼­ EEPROMÀº ¼¾¼­¿Í ¾×Ãß¿¡ÀÌÅÍÀÇ Áß¿äÇÑ ÀûÇÕ¼º ÆÄ¶ó¹ÌÅ͸¦ ÀúÀåÇÏ¿© Â÷·® ¼ö¸í ±â°£ µ¿¾È ÀϰüµÈ ¼º´É°ú ÀûÇÕ¼ºÀ» º¸ÀåÇÕ´Ï´Ù. EEPROMÀº ³·Àº Àü·Â ¼Òºñ, ÀÛÀº Å©±â, ³ôÀº ³»±¸¼ºÀ¸·Î ƯÈ÷ ½Å·Ú¼ºÀÌ °¡Àå Áß¿äÇÑ ¸¶ÀÌÅ©·ÎÄÁÆ®·Ñ·¯ ±â¹Ý ½Ã½ºÅÛ¿¡ ÀûÇÕÇÕ´Ï´Ù. Àü ¼¼°èÀûÀ¸·Î ¿¬°áµÈ Áö´ÉÇü ÀåÄ¡ÀÇ ¼ö°¡ Áõ°¡ÇÔ¿¡ µû¶ó ´Ù¾çÇÑ »ê¾÷°ú ±â¼ú¿¡¼­ EEPROM°ú °°Àº ½Å·ÚÇÒ ¼ö ÀÖ°í À¯¿¬ÇÏ¸ç ¾÷µ¥ÀÌÆ®°¡ ½¬¿î ºñÈֹ߼º ¸Þ¸ð¸®¿¡ ´ëÇÑ ¿ä±¸°¡ Á¡Á¡ ´õ Ä¿Áö°í ÀÖ½À´Ï´Ù.

±â¼ú Çõ½ÅÀº EEPROMÀÇ ¼º´É°ú ¹üÀ§¸¦ ¾î¶»°Ô Çâ»ó½Ã۰í Àִ°¡?

EEPROM ±â¼úÀº ¹ÝµµÃ¼ ¼³°è, °øÁ¤ ¹Ì¼¼È­ ¹× ½Ã½ºÅÛ ÅëÇÕÀÇ ¹ßÀüÀ¸·Î ²÷ÀÓ¾øÀÌ ÁøÈ­Çϰí ÀÖÀ¸¸ç, CMOS(Complementary Metal Oxide Semiconductor) Á¦Á¶ÀÇ Çõ½ÅÀº ´õ ºü¸¥ ¾²±â ¹× Áö¿ì±â ÁÖ±â, È®ÀåµÈ ³»±¸¼º, °¡È¤ÇÑ ÀÛµ¿ Á¶°Ç¿¡¼­ µ¥ÀÌÅÍ ¼Õ»ó¿¡ ´ëÇÑ ³ôÀº ³»¼ºÀ» °®Ãá ´õ ÀÛ°í Àü·Â È¿À²ÀûÀÎ EEPROM ¼¿·Î À̾îÁö°í ÀÖ½À´Ï´Ù. ´õ ÄÄÆÑÆ®Çϰí Àü·Â È¿À²ÀÌ ³ôÀº EEPROM ¼¿·Î À̾îÁ³½À´Ï´Ù. ¿À´Ã³¯ÀÇ EEPROMÀº 1¹ÙÀÌÆ®´ç ÃÖ´ë 100¸¸ »çÀÌŬÀÇ ¾²±â ³»±¸¼º°ú °øÄª Á¶°Ç¿¡¼­ 100³â ÀÌ»óÀÇ µ¥ÀÌÅÍ º¸Á¸ ½Ã°£À» Á¦°øÇÏ¿© ¹Ì¼Ç Å©¸®Æ¼ÄÃÇÑ ¿ëµµÀÇ ½Å·Ú¼ºÀ» Çâ»ó½Ãŵ´Ï´Ù. ¶ÇÇÑ, ½Ã½ºÅÛ ¿Â Ĩ(SoC) ¹× ¸¶ÀÌÅ©·ÎÄÁÆ®·Ñ·¯ À¯´Ö(MCU)¿¡ EEPROMÀ» ÅëÇÕÇÏ¿© ȸ·ÎÀÇ º¹À⼺À» °£¼ÒÈ­Çϰí Àüü BOM(Bill of Materials)À» ÁÙÀÌ´Â °ÍÀÌ ÀϹÝÈ­µÇ°í ÀÖ½À´Ï´Ù. I²C, SPI, Microwire ÇÁ·ÎÅäÄݰú ȣȯµÇ´Â I²C ´ÙÁß ÀÎÅÍÆäÀ̽º EEPROMÀº ´Ù¾çÇÑ µðÁöÅÐ ¾ÆÅ°ÅØÃ³¿¡ ºñÈֹ߼º ¸Þ¸ð¸®¸¦ ÅëÇÕÇÒ ¼ö ÀÖ´Â À¯¿¬¼ºÀ» ¼³°èÀÚ¿¡°Ô Á¦°øÇϸç, IoT µð¹ÙÀ̽º ¹× ¿þ¾î·¯ºí ÀÏ·ºÆ®·Î´Ð½ºÀÇ µîÀåÀ¸·Î ÃÊÀúÀü·Â EEPROMÀº ÃÖ¼ÒÇÑÀÇ ¿¡³ÊÁö ¼Òºñ·Î ¹èÅ͸® ±¸µ¿ ½Ã½ºÅÛÀ» Áö¿øÇϵµ·Ï ¼³°èµÇ¾ú½À´Ï´Ù. ¹èÅ͸® ±¸µ¿ ½Ã½ºÅÛÀ» Áö¿øÇϵµ·Ï ¼³°èµÇ¾ú½À´Ï´Ù. ¶ÇÇÑ, º¯Á¶ °¨Áö ¹× ¾Ïȣȭ ½ºÅ丮Áö¿Í °°Àº »õ·Î¿î º¸¾È ±â´ÉÀÌ º¸¾È ID Ä«µå, ±ÝÀ¶ ±â±â, ½º¸¶Æ® Àá±Ý ÀåÄ¡¿Í °°Àº ¿ëµµ¿¡¼­ ±â¹Ð µ¥ÀÌÅ͸¦ º¸È£Çϱâ À§ÇØ ÅëÇյǰí ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ ±â¼úÀû °­È­´Â »õ·Î¿î ½ÃÀå¿¡¼­ EEPROMÀÇ ÀÔÁö¸¦ È®´ëÇÒ »Ó¸¸ ¾Æ´Ï¶ó ±âÁ¸ ºÐ¾ßÀÇ Çõ½ÅÀ» Áö¿øÇÏ´Â ¿ªÇÒÀ» È®°íÈ÷ Çϰí ÀÖ½À´Ï´Ù.

¿ëµµ ¿ä±¸ »çÇ×°ú ½ÃÀå ¼¼ºÐÈ­°¡ EEPROM ¹èÆ÷ Àü·«¿¡ ¿µÇâÀ» ¹ÌÄ¡´Â ÀÌÀ¯´Â ¹«¾ùÀΰ¡?

EEPROM ¸Þ¸ð¸® ¼Ö·ç¼ÇÀÇ ¹èÆ÷´Â ¾²±â ³»±¸¼º, ¾×¼¼½º ¼Óµµ, Àü·Â Á¦¾à, ȯ°æ ³»±¸¼º µî ¿ëµµº° ¿ä±¸»çÇ׿¡ µû¶ó Å©°Ô Á¿ìµË´Ï´Ù. ¼ÒºñÀÚ ÀüÀÚÁ¦Ç°ÀÇ °æ¿ì, EEPROMÀº TV, °ÔÀÓ±â, Ȩ ¿ÀÅä¸ÞÀÌ¼Ç ½Ã½ºÅÛ µîÀÇ ±â±â¿¡ »ç¿ëÀÚ ¼³Á¤ ¹× ±¸¼º ÆÄ¶ó¹ÌÅ͸¦ ÀúÀåÇÏ´Â µ¥ »ç¿ëµÇ¸ç, Àû´çÇÑ ³»±¸¼º°ú ºñ¿ë È¿À²¼ºÀÌ Áß¿äÇÑ °í·Á»çÇ×ÀÌ µË´Ï´Ù. ¹Ý¸é, Â÷·®¿ë ¿ëµµ´Â ³ôÀº ³»±¸¼º°ú ³»¿­¼ºÀÌ ¿ä±¸µÇ¸ç, EEPROMÀº -40¡ÆC¿¡¼­ +125¡ÆC±îÁö ±ØÇÑÀÇ ¿Âµµ ¹üÀ§¿¡¼­ ¾ÈÁ¤ÀûÀ¸·Î ÀÛµ¿Çϰí Â÷·® ¼º´É¿¡ ÇʼöÀûÀÎ ½Ç½Ã°£ º¸Á¤ µ¥ÀÌÅ͸¦ ÀúÀåÇÒ ¼ö ÀÖ¾î¾ß ÇÕ´Ï´Ù. »ê¾÷ ÀÚµ¿È­ ¹× ·Îº¿ °øÇÐÀº ÇѰ踦 ´õ¿í ³ô¿© Áøµ¿, ÀüÀڱ⠰£¼·, ½Ç½Ã°£ Á¦¾î ȯ°æ¿¡¼­ Áö¼ÓÀûÀÎ Àбâ/¾²±â »çÀÌŬÀ» °ßµô ¼ö ÀÖ´Â EEPROMÀ» ÇÊ¿ä·Î ÇÕ´Ï´Ù. ÀÇ·á¿ë ÀüÀÚ±â±â¿¡¼­´Â Àν¶¸° ÆßÇÁ, ½É¹ÚÁ¶À²±â µîÀÇ ±â±â°¡ °³º° Ä¡·á µ¥ÀÌÅ͸¦ ÀúÀåÇϱâ À§ÇØ EEPROM¿¡ ÀÇÁ¸Çϰí ÀÖÀ¸¸ç, Àå½Ã°£ À¯Áö ¹× ÃÖ¼ÒÇÑÀÇ Àü·Â ¼Òºñ·Î ¸Å¿ì ½Å·ÚÇÒ ¼ö ÀÖ´Â ¸Þ¸ð¸®°¡ ÇÊ¿äÇÕ´Ï´Ù. °£´ÜÇÑ ¼³Á¤ ÀÛ¾÷À» À§ÇÑ ¼Ò¿ë·® EEPROM(256¹ÙÀÌÆ®-128KB)ºÎÅÍ º¸´Ù º¹ÀâÇÑ Æß¿þ¾î ÀúÀåÀ» À§ÇÑ ´ë¿ë·® EEPROM±îÁö, ¸Þ¸ð¸® Å©±â¿¡ µû¸¥ ½ÃÀå ¼¼ºÐÈ­µµ ÇѸòÀ» Çϰí ÀÖ½À´Ï´Ù. °¢ ¿ëµµ °èÃþÀº ƯÁ¤ ÆÐŰ¡, ÀÎÅÍÆäÀ̽º ¹× ³»±¸¼º Ư¼ºÀ» ¿ä±¸Çϱ⠶§¹®¿¡ EEPROM Á¦Á¶¾÷ü´Â ÀÌ¿¡ µû¶ó Á¦Ç° ¶óÀÎÀ» Á¶Á¤ÇÏ°í ´Ù¾çÇÑ ¿î¿µ ¹× ±ÔÁ¦ ¿ä°ÇÀ» ÃæÁ·ÇÏ´Â È®Àå °¡´ÉÇÑ ¸Þ¸ð¸® ¼Ö·ç¼ÇÀ» °³¹ßÇØ¾ß ÇÕ´Ï´Ù.

¼¼°è EEPROM ½ÃÀåÀÇ ¼ºÀåÀ» °¡¼ÓÇÏ´Â ÁÖ¿ä ¿äÀÎÀº?

¼¼°è EEPROM ½ÃÀåÀÇ ¼ºÀåÀº ÀÓº£µðµå ½Ã½ºÅÛ¿¡¼­ ºñÈֹ߼º ¸Þ¸ð¸®¿¡ ´ëÇÑ ¼ö¿ä Áõ°¡, IoT µð¹ÙÀ̽ºÀÇ È®»ê, »ê¾÷ Àü¹ÝÀÇ µðÁöÅÐÈ­, ¹Ì¼Ç Å©¸®Æ¼ÄÃÇÑ ¿ëµµ¿¡¼­ ½Å·ÚÇÒ ¼ö ÀÖ´Â µ¥ÀÌÅÍ º¸Á¸¿¡ ´ëÇÑ Çʿ伺ÀÌ Áõ°¡ÇÔ¿¡ µû¶ó ÀÌ·ç¾îÁö°í ÀÖ½À´Ï´Ù. Çö´ëÀÇ ÀüÀÚ±â±â´Â ´õ ³ôÀº ¿¬°á¼º°ú ÀÚÀ²¼ºÀ» À§ÇØ ÁøÈ­Çϰí ÀÖÀ¸¸ç, EEPROMÀº ¿ÜºÎ ½ºÅ丮Áö ¼Ö·ç¼Ç¿¡ ÀÇÁ¸ÇÏÁö ¾Ê°íµµ Àç±â·Ï °¡´É¼º, ³»±¸¼º, ¿µ¼Ó¼ºÀÇ ±ÕÇüÀ» ¸ÂÃâ ¼ö ÀÖ´Â Áß¿äÇÑ ¸Þ¸ð¸® ¿É¼ÇÀ» Á¦°øÇÕ´Ï´Ù. ½º¸¶Æ® Ȩ ±â±â ¹× ¿þ¾î·¯ºí ±â¼ú¿¡¼­ Â÷·®¿ë ¼­ºê½Ã½ºÅÛ ¹× »ê¾÷¿ë ¼¾¼­¿¡ À̸£±â±îÁö ¸¶ÀÌÅ©·ÎÄÁÆ®·Ñ·¯ ±â¹Ý ¼³°èÀÇ ±Þ°ÝÇÑ Áõ°¡·Î ÀÎÇØ ¿¡³ÊÁö ÀÔ·Â ¾øÀÌ »ç¿ëÀÚ ¼³Á¤, ¼¾¼­ º¸Á¤ ¹× Æß¿þ¾î ÆÐÄ¡¸¦ ÀúÀåÇÒ ¼ö ÀÖ´Â ÀÓº£µðµå ¸Þ¸ð¸®¿¡ ´ëÇÑ ¼ö¿ä°¡ Áö¼ÓÀûÀ¸·Î Áõ°¡Çϰí ÀÖ½À´Ï´Ù. ¼ö¿ä°¡ Áö¼ÓÀûÀ¸·Î Áõ°¡Çϰí ÀÖ½À´Ï´Ù. ¶ÇÇÑ, Àδõ½ºÆ®¸® 4.0°ú ¿§Áö ÄÄÇ»ÆÃÀÇ ÃßÁøÀ¸·Î ÀÎÇØ ´Ù¾çÇÏ°í °¡È¤ÇÑ È¯°æ¿¡¼­ ÀÛµ¿ÇÏ´Â ¿§Áö µð¹ÙÀ̽º¸¦ À§ÇÑ ÄÄÆÑÆ®ÇÏ°í °ß°íÇϸç À¯¿¬ÇÑ ¸Þ¸ð¸® ¼Ö·ç¼ÇÀÌ ¿ä±¸µÇ°í ÀÖ½À´Ï´Ù. ƯÈ÷ ÀÚµ¿Â÷ ¹× ±×¸®µå ±â¹Ý ÀÎÇÁ¶ó¿¡¼­ Àü±âÈ­·ÎÀÇ ÀüȯÀº ¹èÅ͸® °ü¸® ½Ã½ºÅÛ, Àü·Â ÀιöÅÍ, ¿¡³ÊÁö °è·®±â µî¿¡¼­ EEPROMÀÇ È°¿ëµµ¸¦ ´õ¿í È®´ë½Ã۰í ÀÖ½À´Ï´Ù. ºñ¿ë Àý°¨, ¿ë·® ¹üÀ§ È®´ë, º¸¾È ±â´ÉÀÇ ÅëÇÕÀ¸·Î ÀÎÇØ EEPROMÀº ½Ã½ºÅÛÀÇ º¹À⼺À» ÃÖ¼ÒÈ­Çϸ鼭 Àå±â ÀúÀåÀ» ¿øÇÏ´Â Á¦Á¶¾÷üµé¿¡°Ôµµ ¸Å·ÂÀûÀ¸·Î ´Ù°¡¿À°í ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ ¼¼°èÀûÀÎ Ãß¼¼´Â Ĩ ¼³°è ¹× ÀÎÅÍÆäÀ̽º ÇÁ·ÎÅäÄÝÀÇ ¹ßÀü°ú ÇÔ²² Àü ¼¼°èÀûÀ¸·Î EEPROM ½ÃÀåÀÇ Áö¼ÓÀûÀÎ ¼ºÀå°ú Çõ½ÅÀ» À§ÇÑ ¹ßÆÇÀ» ¸¶·ÃÇϰí ÀÖ½À´Ï´Ù.

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Global Electrically Erasable Programmable Read-Only Memory (EEPROM) Market to Reach US$909.3 Million by 2030

The global market for Electrically Erasable Programmable Read-Only Memory (EEPROM) estimated at US$723.9 Million in the year 2024, is expected to reach US$909.3 Million by 2030, growing at a CAGR of 3.9% over the analysis period 2024-2030. 16 Kbit, one of the segments analyzed in the report, is expected to record a 4.8% CAGR and reach US$262.7 Million by the end of the analysis period. Growth in the 32 Kbit segment is estimated at 4.6% CAGR over the analysis period.

The U.S. Market is Estimated at US$197.2 Million While China is Forecast to Grow at 7.3% CAGR

The Electrically Erasable Programmable Read-Only Memory (EEPROM) market in the U.S. is estimated at US$197.2 Million in the year 2024. China, the world's second largest economy, is forecast to reach a projected market size of US$185.2 Million by the year 2030 trailing a CAGR of 7.3% over the analysis period 2024-2030. Among the other noteworthy geographic markets are Japan and Canada, each forecast to grow at a CAGR of 1.5% and 3.0% respectively over the analysis period. Within Europe, Germany is forecast to grow at approximately 2.2% CAGR.

Global Electrically Erasable Programmable Read-Only Memory (EEPROM) Market - Key Trends & Drivers Summarized

Why Is EEPROM Critical to the Reliability and Flexibility of Embedded Electronic Systems?

Electrically Erasable Programmable Read-Only Memory (EEPROM) is a vital component in embedded electronics, offering non-volatile data storage with the ability to be electrically rewritten at the byte level without the need for removal or reprogramming of the chip. Unlike traditional ROM, which is permanently programmed during manufacture, or EPROM, which requires ultraviolet light for erasure, EEPROM can be modified while in-system, enabling dynamic updates to firmware, configuration settings, calibration data, and error logs. This makes it indispensable in devices that must retain critical data through power cycles or require periodic updates in the field. Applications span across automotive ECUs (engine control units), medical devices, industrial automation systems, consumer electronics, smart meters, and communication equipment. For example, in automotive systems, EEPROM stores vital calibration parameters for sensors and actuators, ensuring consistent performance and adaptability over the vehicle’s lifetime. Its low power consumption, small size, and high endurance make it well-suited for microcontroller-based systems, especially where reliability is paramount. As the number of connected and intelligent devices grows globally, the need for reliable, flexible, and easily updatable non-volatile memory like EEPROM is becoming increasingly pronounced across a diverse range of industries and technologies.

How Are Technological Innovations Enhancing the Performance and Scope of EEPROM?

EEPROM technology is continuously evolving, driven by advances in semiconductor design, process miniaturization, and system integration. Innovations in CMOS (Complementary Metal-Oxide Semiconductor) fabrication have led to more compact and power-efficient EEPROM cells with faster write and erase cycles, extended endurance, and greater resistance to data corruption under harsh operating conditions. Today’s EEPROMs offer write endurance of up to one million cycles per byte and data retention times exceeding 100 years under nominal conditions, making them highly reliable for mission-critical applications. Furthermore, the integration of EEPROM into system-on-chip (SoC) and microcontroller units (MCUs) is becoming commonplace, streamlining circuit complexity and reducing overall bill of materials (BOM). Multi-interface EEPROMs, compatible with I²C, SPI, and Microwire protocols, provide designers with flexibility in embedding non-volatile memory into various digital architectures. With the rise of IoT devices and wearable electronics, ultra-low-power EEPROMs are being designed to support battery-powered systems with minimal energy drain. Additionally, emerging security features, such as tamper detection and encrypted storage, are being integrated to protect sensitive data in applications like secure ID cards, financial devices, and smart locks. These technological enhancements are not only expanding EEPROM's footprint in new markets but also solidifying its role in supporting innovation across established sectors.

Why Do Application Requirements and Market Segmentation Influence EEPROM Deployment Strategies?

The deployment of EEPROM memory solutions is heavily shaped by application-specific requirements such as write endurance, access speed, power constraints, and environmental durability, which vary significantly across industry verticals. In consumer electronics, EEPROMs are used for storing user settings and configuration parameters in devices like TVs, gaming consoles, and home automation systems, where moderate endurance and cost-efficiency are key considerations. In contrast, automotive applications demand high endurance and temperature tolerance, with EEPROMs required to operate reliably in temperature extremes ranging from -40°C to +125°C while storing real-time calibration data critical to vehicle performance. Industrial automation and robotics further push the limits, requiring EEPROMs that can withstand vibrations, electromagnetic interference, and continuous read-write cycles in real-time control environments. In medical electronics, devices such as insulin pumps and pacemakers rely on EEPROM for storing personalized treatment data, necessitating ultra-reliable memory with long retention and minimal power draw. Market segmentation by memory size also plays a role-ranging from small-capacity EEPROMs (256 bytes to 128 KB) for simple configuration tasks to larger capacities for more complex firmware storage. Each application tier demands specific packaging, interface, and endurance characteristics, prompting EEPROM manufacturers to tailor their product lines accordingly and develop scalable memory solutions for different operational and regulatory requirements.

What Are the Key Drivers Fueling Growth in the Global EEPROM Market?

The growth in the global EEPROM market is driven by rising demand for non-volatile memory in embedded systems, the proliferation of IoT devices, increasing digitalization across industries, and the need for reliable data retention in mission-critical applications. As modern electronics continue to evolve toward greater connectivity and autonomy, EEPROM offers a crucial memory option that balances rewritability, endurance, and persistence without relying on external storage solutions. The exponential rise in microcontroller-based designs-across everything from smart home devices and wearable tech to automotive subsystems and industrial sensors-has created sustained demand for embedded memory that can store user preferences, sensor calibration, and firmware patches without energy input. Additionally, the push for Industry 4.0 and edge computing requires compact, robust, and flexible memory solutions in edge devices operating in varied and often harsh environments. The global shift toward electrification, especially in automotive and grid-based infrastructure, is further expanding the EEPROM footprint in battery management systems, power inverters, and energy meters. Cost reductions, expanded capacity ranges, and integrated security features have also made EEPROM more appealing to manufacturers seeking long-term storage with minimal system complexity. These converging trends, along with advancements in chip design and interface protocols, are setting the stage for continued growth and innovation in the EEPROM market globally.

SCOPE OF STUDY:

The report analyzes the Electrically Erasable Programmable Read-Only Memory (EEPROM) market in terms of units by the following Segments, and Geographic Regions/Countries:

Segments:

Product (16 Kbit, 32 Kbit, 64 Kbit, 128 Kbit, 256 Kbit, 512 Kbit, 1 Mbit, 2 Mbit); End-Use (Consumer Electronics, Communication, Automotive, Industrial, Computer, Other End-Uses)

Geographic Regions/Countries:

World; United States; Canada; Japan; China; Europe (France; Germany; Italy; United Kingdom; Spain; Russia; and Rest of Europe); Asia-Pacific (Australia; India; South Korea; and Rest of Asia-Pacific); Latin America (Argentina; Brazil; Mexico; and Rest of Latin America); Middle East (Iran; Israel; Saudi Arabia; United Arab Emirates; and Rest of Middle East); and Africa.

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TABLE OF CONTENTS

I. METHODOLOGY

II. EXECUTIVE SUMMARY

III. MARKET ANALYSIS

IV. COMPETITION

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